doping concentration

By using the definition of effective doping concentration gradient and depletion approximation, an analytical solution for avalanche breakdown voltage of double sided asymmetric linearly graded junction has been derived.

通过有效掺杂浓度梯度的定义和耗尽近似求解，得到非对称线性缓变结击穿电压的简洁表达式。

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investigation for electrical properties of zao thin films indicates that al doping concentration and annealing temperature have a strong influence on the properties of the films.

薄膜的电学性能分析结果表明，ZAO薄膜的电阻率受Al掺杂浓度及退火温度的影响较大。

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The effect of doping concentration on Band-gap narrowing of P-type GaAs

掺杂浓度对p-GaAs的带隙变窄的影响

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Then, EDWA is optimized based on gain characteristics from waveguide length, doping concentration, pump power and signal power.

然后，从光波导放大器的速率方程及传输方程出发，对波导增益特性进行了理论分析，在此基础上从波导长度、掺杂浓度、泵浦光功率等角度进行了优化。

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The resistivity, squared resistance and temperature coefficient of resistance in hydrogenated silicon film decrease with the increasing of boron doping concentration.

通过研究硼掺杂浓度与氢化硅薄膜电学特性关系表明硼掺杂降低了薄膜的电阻率和方阻值，同时也降低了薄膜的温度电阻系数。

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the excitation wavelengths can affect the intensity ratio, and the doping concentration has a great influence on the crystal constants and the luminescent properties.

此外，不同激发波长下得到样品的发光强度比不同，掺杂浓度对晶体的晶格常数、发光性能也有较大影响。

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With increasing doping concentration , the impact of neutral impurity scattering becomes more significant.

随着掺杂浓度的增加, 中性杂质散射作用增强.

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Due to the complicated structure of LDMOS and the nonuniformly channel doping concentration, analytical models are very difficult to establish.

LDMOS的结构复杂，而且沟道是非均匀掺杂，很难求出解析模型。

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The doping concentration in the active region has great effect on the waveguide property. With the increasing of doping concentration, the waveguide loss, threshold gain and current density of THz QCL increase, the confinement factor decrease. 3.

结果表明，随着有源区掺杂浓度的提高，波导损耗增加，阈值电流增加，波导限制因子降低。

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The effect of rare-earth element doping concentration on the luminescence intensity is discussed in this paper.

讨论了不同稀土掺杂浓度对材料发光强度的影响。

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Then does numerical simulation about the effect of the optical fiber length, pump power, signal power and doping concentration on gain of the optical fiber amplifier, and selects optimal parameters for the amplifier by analyzing the simulation result.

接着对光纤长度、泵浦光功率、信号光功率以及铒/镱离子的掺杂浓度比例对光纤放大器增益特性的影响进行了数值模拟，分析仿真结果从而选择了放大器最优的参数。

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As the DBSA doping concentration increased, the PAN solution conductivity was increasing, the average diameter of fibers was gradually decreasing.

实验结果表明：随着十二烷基苯磺酸掺杂浓度的增加，聚丙烯腈溶液的电导率增大，纤维的平均直径逐渐降低，纤维的直径分布变窄。

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The doping concentration can be optimized by changing the content of Te.

通过改变Te的相对含量，可以调节施主掺杂浓度。

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according to the relationship between the crystal doping concentration and the laser pump light absorption, gives the ladder doped crystal.

根据激光晶体掺杂浓度与泵浦光吸收之间的关系得出了阶梯掺杂晶体模型。

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Studies on optimization of fiber structure and doping method for high doping concentration Er-doped fiber

高掺杂铒光纤结构优化和掺杂方法的研究

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it is described in this paper that the cut-off wave length of ptsi schottky infrared detector can be extended to long wave-length infrared region by doping process of setting a thin spike with high doping concentration.

通过使用分子束外延（MBE）生长技术在PtSi／Si界面上加进一足够薄的高掺杂浓度峰（P＋），可使PtSi肖特基红外探测器的截止波长延伸至长波红外范围。

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the effects of different doping concentration of eu 2 + on the properties of sr 2 al 6 o 11-based phosphor were studied.

研究了不同Eu掺杂浓度 对Sr2Al6O11基磷光体发光性能的影响.

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A novel structure of ideal ohmic contact p+ ( SiGeC)-n& n+ diodes with three-step graded doping concentration in the base region is presented, and the changing doping concentration gradient is also optimized.

将新器件结构与新型半导体材料相结合，提出了一种新型的n-区三层渐变掺杂理想欧姆接触型p+（SiGeC）-n&n+异质结功率二极管，并对n-区的杂质分布梯度进行了优化。

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the effective doping concentration profile in the semiconductor diffusion layer can be derived by combining the following two methods: the anodic oxidation and stripping, and the four-point probe measurement of the square resistance.

利用阳极氧化去层结合四探针测量方块电阻的方法可以得到半导体扩散层中有效杂质浓度分布曲线。

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exponential-doping photocathodes, in which from the gaas bulk to the surface the doping concentration is distributed exponentially from high to low, can form a stable built-in electric field in the active layer, and the electric field facilitates the excited photoelectron emission.

将GaAs光电阴极发射层掺杂浓度由体内到发射表面从高到低的进行指数掺杂，能在发射层形成一个恒定的内建电场，有利于光电子的逸出。

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when doping concentration is increased, the system turns its semiconductor into conducting characteristics.

随着掺杂浓度的增大, 该体系逐渐从半导体特性向导体方向转变.

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with increasing doping concentration, the impact of neutral impurity scattering becomes more significant.

随着掺杂浓度的增加，中性杂质散射作用增强。

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For the lasers with symmetrical waveguide, the photon absorption of the non-active region material is proportional to the doping concentration of material, which causes serious absorption loss.

对称波导结构激光器中，非有源区材料对光子的吸收与其掺杂浓度成正比关系，吸收损耗比较严重。

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The power distribution of pumping light and signal light in fiber, fiber length, rear cavity mirror reflectivity, threshold power, doping concentration and pump geometry which can influence the characteristic of the fiber laser are deeply investigated in the MATLAB simulation environment. 3.

在MATLAB仿真环境中，进一步分析泵浦光和信号光功率分布、光纤长度、后腔镜反射率、阈值功率、掺杂浓度以及泵浦结构对输出功率的影响。

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